Field-effect-driven half-metallic multilayer graphene

Rhombohedral stacked multilayer graphene displays the occurrence of amagnetic surface state at low temperatures. Recent angular resolved photoemission experiments demonstrate the robustness of the magnetic state in long sequences of ABC graphene. Here, by using first-principles calculations, we show that field-effect doping of these graphene multilayers induces a nonrigid electronic structure deformation and stabilizes a perfect half-metallic behavior with nearly 100% of spin current polarization and sizable conductivity already at dopings attainable in conventional field-effect transistors with solid state dielectrics. At high doping, magnetism disappears and a flat electronic band prone to correlated, charge density wave, or superconducting instabilities occurs at the Fermi level. Our work demonstrates the realizability of a new kind of spintronic devices where the transition between the low resistance and the high resistance state is driven only by electric fields.